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 SH0R3D42
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
SH0R3D42
HIGH SPEED SWITCHING AND CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage : VDRM = 200V l Average On-State Current l Plastic Mold Type. : IT (AV) = 300mA Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off-State Voltage (RGK = 1k) Non-Repetitive Peak Off-State Voltage (RGK = 1k) Average On-State Current (Half Sine Waveform Ta = 30C) R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range
2
SYMBOL VDRM VDSM IT (AV) IT (RMS) ITSM It PGM PG (AV) VFGM VRGM IGM Tj Tstg
2
RATING 200 250 300 450 7 (50Hz) 0.3 0.1 0.01 3.5 -7 125 -40~125 -40~125
UNIT V V mA mA A As W W V V mA C C
2
JEDEC JEITA TOSHIBA Weight: 0.2g
TO-92 SC-43 13-5A1A
Note:
Should be used with gate resistance as follows.
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SH0R3D42
ELECTRICAL CHARACTERISTICS (Ta = 25C)
CHARACTERISTIC Repetitive Peak Off-State Current and Peak Reverse Current Peak On-State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non-Trigger Voltage Turn-On Time Turn-Off Time Critical Rate of Rise of Off-State Voltage Holding Current Thermal Resistance SYMBOL IDRM VTM VGT IGT VGD tgt tq dv / dt IH Rth (j-c) TEST CONDITION Tj = 125C, VDRM = Rated RGK = 1k ITM = 2A VD = 6V, RL = 100 VD = Rated, Tc = 110C VD = Rated, ITM = 4A IG = 10mA VD = 20V, IP = 1A, RGK = 1k VD = Rated, RGK = 1k Tc = 110C, Exponential Rise RL = 100, RGK = 1k Junction to Ambient MIN 0.3 15 MAX 100 1.8 0.9 1.0 2.0 6.0 15 250 UNIT A V V mA V s s V / s mA C / W
MARKING
NUMBER *1 TYPE SYMBOL SH0R3D42 MARK H0R3D
*2
Example 8A : January 1998 8B : February 1998 8L : December 1998
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SH0R3D42
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SH0R3D42
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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